Structural and optical properties investigation of (In,Ga)As/GaP quantum dots for direct bandgap emission

International audience; Room temperature electroluminescence of a GaP‐based LED on Si and photoluminescence of (In,Ga)As quantum dots (QDs) located at 200nm of the III‐V/Si interface were obtained, illustrating the good structural quality of the GaP/Si template used. The last step towards room temperature lasing on Si is thus reaching the direct bandgap emission. In this work, we investigate the structural and optical properties of (In,Ga)As/GaP QDs, and show that it is possible to incorporate 35% of In with a high density of QDs, and discuss the results obtained in view of the direct bandgap emission.