Impact of Progressive Soft Oxide Breakdown on MOS Parameters: Experiment and Modelling

Authors :: Gerrer, L.
Ribes, G.
gerard ghibaudo
Jomaah, J.
Domenget, Chahla
Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC)
Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS)
Source :: HAL, 15th Workshop on Dielectrics in Microelectronics, Berlin, Germany, 15th Workshop on Dielectrics in Microelectronics, Berlin, Germany, Jun 2008, Berlin, Germany
Publication Year :: 2008
Publisher :: HAL CCSD, 2008.
Abstract: International audience

Subjects :: [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
ComputingMilieux_MISCELLANEOUS

Language :: English
Database :: OpenAIRE
Journal :: HAL, 15th Workshop on Dielectrics in Microelectronics, Berlin, Germany, 15th Workshop on Dielectrics in Microelectronics, Berlin, Germany, Jun 2008, Berlin, Germany
Accession number :: edsair.dedup.wf.001..e2ed4c58a83725c11a4c95286fdc30d0

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