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Effect of lateral coupling on the carrier redistribution in InAs/InP(311)B high dots surface density
- Source :
- Proceedings of the SQDA, International Workshop on Semiconductor Quantum Dot Devices and Applications, International Workshop on Semiconductor Quantum Dot Devices and Applications, Jul 2008, rennes, France. pp.1
- Publication Year :
- 2008
- Publisher :
- HAL CCSD, 2008.
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Abstract
- International audience
Details
- Language :
- English
- Database :
- OpenAIRE
- Journal :
- Proceedings of the SQDA, International Workshop on Semiconductor Quantum Dot Devices and Applications, International Workshop on Semiconductor Quantum Dot Devices and Applications, Jul 2008, rennes, France. pp.1
- Accession number :
- edsair.dedup.wf.001..e29c06f31ce87114d8dc891603dfd6e1