Optical Properties of Self-Assembled GaxIn1–xAs/InP Quantum Wires

8 páginas, 2 figuras, 1 tabla.-- PACS numbers 73.21.Hb; 78.55.Cr; 78.67.Lt; S7.11; S7.12.
Temperature dependent photoluminescence studies have been carried out on several samples containing self-assembled GaxIn1–xAs/InP quantum wires. A red-shift of the emission wavelength is observed when increasing the Ga content in the alloy, but the overall optical quality decreases. In the case of x = 0.15, the photoluminescence is not sensible to temperature and the emission band is conserved until room temperature is reached, which could be explained if the nanostructures are considered to be almost amorphous.
This work has been supported by the spanish CICYT under the project No. TIC99-1035-C02.