Origin of Vt instabilities in high-k dielectrics: Jahn-Tellet effects or oxygen vacancies

Authors :: Ribes, G.
Bruyère, S.
Roy, D.
Parthasarathy, C.
Muller, M.
Denais, M.
Huard, V.
Skotnicki, T.
gerard ghibaudo
Institut de Microélectronique, Electromagnétisme et Photonique (IMEP)
Université Joseph Fourier - Grenoble 1 (UJF)-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS)
Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique de Grenoble (INPG)-Université Joseph Fourier - Grenoble 1 (UJF)
Ghibaudo, Gerard
Source :: IEEE Transactions on Device and Materials Reliability, IEEE Transactions on Device and Materials Reliability, Institute of Electrical and Electronics Engineers, 2006, 6, pp.132, HAL
Publication Year :: 2006
Publisher :: HAL CCSD, 2006.
Abstract: International audience

Subjects :: [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
ComputingMilieux_MISCELLANEOUS

Language :: English
ISSN :: 15304388
Database :: OpenAIRE
Journal :: IEEE Transactions on Device and Materials Reliability, IEEE Transactions on Device and Materials Reliability, Institute of Electrical and Electronics Engineers, 2006, 6, pp.132, HAL
Accession number :: edsair.dedup.wf.001..b9c5a437ce20aeb6ec513ba1f2bacfd8

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