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Profiling the temperature distribution in AlGaN/GaN HEMTs with nanocrystalline diamond heat spreading layers
- Source :
- Profiling the temperature distribution in AlGaN/GaN HEMTs with nanocrystalline diamond heat spreading layers | CSManTech Conference | 23/04/2012-26-04/2012 | Boston, Massachusetts, USA, Archivo Digital UPM, Universidad Politécnica de Madrid
- Publication Year :
- 2012
- Publisher :
- E.T.S.I. Telecomunicación (UPM), 2012.
-
Abstract
- Reduced performance in Gallium Nitride (GaN) based high electron mobility transistors (HEMTs) as a result of self-heating has been well-documented. A new approach, termed “diamond-before-gate" is shown to improve the thermal budget of the deposition process and enables large area diamond without degrading the gate metal NCD capped devices had a 20% lower channel temperature at equivalent power dissipation.
- Subjects :
- Telecomunicaciones
Electrónica
Subjects
Details
- Language :
- English
- Database :
- OpenAIRE
- Journal :
- Profiling the temperature distribution in AlGaN/GaN HEMTs with nanocrystalline diamond heat spreading layers | CSManTech Conference | 23/04/2012-26-04/2012 | Boston, Massachusetts, USA, Archivo Digital UPM, Universidad Politécnica de Madrid
- Accession number :
- edsair.dedup.wf.001..b576804dcd7fefe406dceee291e84cc2