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Measurements of near infrared frequency mixing by metal-semiconductor point-contact diodes

Authors :
Bava, E.
Beverini, Nicolo'
Carelli, Giorgio
DE MICHELE, Andrea
Galzerano, G.
Moretti, A.
Prevedelli, M.
Sorrentino, F.
Svelto, C.
Source :
IEEE transactions on instrumentation and measurement 54 (2005): 1407–1411., info:cnr-pdr/source/autori:E. Bava, N. Beverini, G. Carelli, A. De Michele, G. Galzerano, E. Maccioni, A. Moretti, F. Sorrentino, and C. Svelto/titolo:Measurements of near infrared frequency mixing by metal-semiconductor point-contact diodes/doi:/rivista:IEEE transactions on instrumentation and measurement/anno:2005/pagina_da:1407/pagina_a:1411/intervallo_pagine:1407–1411/volume:54
Publication Year :
2005
Publisher :
Institute of Electrical and Electronics Engineers., New York, Stati Uniti d'America, 2005.

Abstract

The performances of metal–semiconductor pointcontact diodes as mixers in the near-infrared region were tested. Preliminary experiments were performed in order to phase-lock two diode lasers at 850 nm a few hundred gigahertz apart. GaSb, InAs, and InSb as semiconductor layers were used. The frequency bridge between the two lasers was covered by a Gunn diode frequency locked to a 1-GHz oscillator. A novel phase-lock circuit was tested on two diode lasers 72 GHz apart.

Details

Database :
OpenAIRE
Journal :
IEEE transactions on instrumentation and measurement 54 (2005): 1407–1411., info:cnr-pdr/source/autori:E. Bava, N. Beverini, G. Carelli, A. De Michele, G. Galzerano, E. Maccioni, A. Moretti, F. Sorrentino, and C. Svelto/titolo:Measurements of near infrared frequency mixing by metal-semiconductor point-contact diodes/doi:/rivista:IEEE transactions on instrumentation and measurement/anno:2005/pagina_da:1407/pagina_a:1411/intervallo_pagine:1407–1411/volume:54
Accession number :
edsair.dedup.wf.001..a47d637c6836ca644ca2c6071821e5a8