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Measurements of near infrared frequency mixing by metal-semiconductor point-contact diodes
- Source :
- IEEE transactions on instrumentation and measurement 54 (2005): 1407–1411., info:cnr-pdr/source/autori:E. Bava, N. Beverini, G. Carelli, A. De Michele, G. Galzerano, E. Maccioni, A. Moretti, F. Sorrentino, and C. Svelto/titolo:Measurements of near infrared frequency mixing by metal-semiconductor point-contact diodes/doi:/rivista:IEEE transactions on instrumentation and measurement/anno:2005/pagina_da:1407/pagina_a:1411/intervallo_pagine:1407–1411/volume:54
- Publication Year :
- 2005
- Publisher :
- Institute of Electrical and Electronics Engineers., New York, Stati Uniti d'America, 2005.
-
Abstract
- The performances of metalsemiconductor pointcontact diodes as mixers in the near-infrared region were tested. Preliminary experiments were performed in order to phase-lock two diode lasers at 850 nm a few hundred gigahertz apart. GaSb, InAs, and InSb as semiconductor layers were used. The frequency bridge between the two lasers was covered by a Gunn diode frequency locked to a 1-GHz oscillator. A novel phase-lock circuit was tested on two diode lasers 72 GHz apart.
- Subjects :
- Near-infrared, optical mixer
Frequency measurement
Phase-lock
Diode laser
Subjects
Details
- Database :
- OpenAIRE
- Journal :
- IEEE transactions on instrumentation and measurement 54 (2005): 1407–1411., info:cnr-pdr/source/autori:E. Bava, N. Beverini, G. Carelli, A. De Michele, G. Galzerano, E. Maccioni, A. Moretti, F. Sorrentino, and C. Svelto/titolo:Measurements of near infrared frequency mixing by metal-semiconductor point-contact diodes/doi:/rivista:IEEE transactions on instrumentation and measurement/anno:2005/pagina_da:1407/pagina_a:1411/intervallo_pagine:1407–1411/volume:54
- Accession number :
- edsair.dedup.wf.001..a47d637c6836ca644ca2c6071821e5a8