Future prospects in plasma etching processes involved in ULSI technology

Authors :: Joubert, O.
Pargon, E.
Chevolleau, T.
Cunge, G.
Vallier, L.
David, T.
Barnola, S.
Lill, T.
Laboratoire des technologies de la microélectronique (LTM)
Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Joseph Fourier - Grenoble 1 (UJF)-Centre National de la Recherche Scientifique (CNRS)
Science et Ingénierie des Matériaux et Procédés (SIMaP)
Université Joseph Fourier - Grenoble 1 (UJF)-Centre National de la Recherche Scientifique (CNRS)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Institut National Polytechnique de Grenoble (INPG)
Université Joseph Fourier - Grenoble 1 (UJF)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)
Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)
Source :: The international Conference “Micro and Nanoelectronics-2009” (ICMNE 2009), The international Conference “Micro and Nanoelectronics-2009” (ICMNE 2009), 2009, moscou, Russia, Micro and Nanoelectronics (ICMNE 2009), Micro and Nanoelectronics (ICMNE 2009), 2009, Moscou, Russia
Publication Year :: 2009
Publisher :: HAL CCSD, 2009.
Abstract: International audience

Subjects :: [SPI]Engineering Sciences [physics]
ComputingMilieux_MISCELLANEOUS

Language :: English
Database :: OpenAIRE
Journal :: The international Conference “Micro and Nanoelectronics-2009” (ICMNE 2009), The international Conference “Micro and Nanoelectronics-2009” (ICMNE 2009), 2009, moscou, Russia, Micro and Nanoelectronics (ICMNE 2009), Micro and Nanoelectronics (ICMNE 2009), 2009, Moscou, Russia
Accession number :: edsair.dedup.wf.001..a1ceaafd1fb44a528aa2df2746b58926

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