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Level Spectrum of Single Gated As Donors
- Source :
- Other Nanotechnology Publications, ResearcherID
- Publication Year :
- 2008
- Publisher :
- Purdue University, 2008.
-
Abstract
- We study the electrical transport through single As donors incorporated in the channel of a FinFET, i.e. a donor in a three-terminal geometry. By means of spectroscopic measurements in conjuction with a NEMO-3D model, we can identify the excited states and associate them with either the donors Coulomb potential, a triangular well at the interface or a hybridized combination of the two. The correspondence between the transport measurements, the theoretical model and the local environment provides an atomic understanding of actual gated donors in a nanostructure.
- Subjects :
- Transport spectroscopy
Single donors
FinFET
Nanoscience and Nanotechnology
Subjects
Details
- Database :
- OpenAIRE
- Journal :
- Other Nanotechnology Publications, ResearcherID
- Accession number :
- edsair.dedup.wf.001..9dc7f868635b13a4319c08ca5df65276