Very large monolayer graphene ribbons grown on SiC

Authors :: Camara, Nicolas
Rius, G.
Huntzinger, Jean Roch
Tiberj, Antoine
Mestres, N.
Pérez Murano, F.
Godignon, Philippe
Camassel, Jean
Centro Nacional de Microelectronica [Spain] (CNM)
Groupe d'étude des semiconducteurs (GES)
Centre National de la Recherche Scientifique (CNRS)-Université Montpellier 2 - Sciences et Techniques (UM2)
Institut de Ciència de Materials de Barcelona (ICMAB)
Consejo Superior de Investigaciones Científicas [Madrid] (CSIC)
Centre Nacional de Microelectrònica (CNM)
Universitat Autònoma de Barcelona (UAB)
Université Montpellier 2 - Sciences et Techniques (UM2)-Centre National de la Recherche Scientifique (CNRS)
Source :: International workshop on 3C-SiC hetero-epitaxy (HeteroSiC '09), International workshop on 3C-SiC hetero-epitaxy (HeteroSiC '09), 2009, Catane, Italy
Publication Year :: 2009
Publisher :: HAL CCSD, 2009.

Subjects :: [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]

Language :: English
Database :: OpenAIRE
Journal :: International workshop on 3C-SiC hetero-epitaxy (HeteroSiC '09), International workshop on 3C-SiC hetero-epitaxy (HeteroSiC '09), 2009, Catane, Italy
Accession number :: edsair.dedup.wf.001..9a24e6bec1b0cc855416281481d6c5b1