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Effect of Passivation on Microwave Power Performances of AlGaN/GaN/Si HEMTs

Authors :: Mosbahi, H.
Charfeddine, M.
Gassoumi, M.
Mejri, H.
Gaquière, Christophe
Grimbert, Bertrand
Zaidi, M.A.
Maaref, H.
Laboratoire de Micro-optoélectronique et Nanostructures [Monastir]
Faculté des Sciences de Monastir (FSM)
Université de Monastir - University of Monastir (UM)-Université de Monastir - University of Monastir (UM)
Laboratoire d'Electronique et de Microélectronique [Monastir] (EμE)
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN)
Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)
Source :: Sensors & Transducers, Vol 27, Iss Special Issue, Pp 277-279 (2014), Sensors & Transducers Journal, Sensors & Transducers Journal, International Frequency Sensor Association (IFSA), 2014, 27, pp.277-279, Sensors & Transducers Journal, 2014, 27, pp.277-279
Publication Year :: 2014
Publisher :: IFSA Publishing, S.L., 2014.
Abstract: This paper reports on the use of plasma assisted molecular beam epitaxy of AlGaN/GaN high electron mobility transistors (HEMTs) grown on silicon substrate. Surface passivation effects on AlGaN/GaN HEMTs were studied using SiO2/SiN dielectric layers grown by plasma enhanced chemical vapor deposition. The direct current measurement, pulsed characteristics and microwave small-signal characteristics were studied before and after passivation. An improvement of drain-source current density and the extrinsic transconductance was observed on the passivated HEMTs when compared with the unpassivated HEMTs. An enhancement of cut-off frequency (ft) and maximum power gain (fmax) was also observed for the devices with full SiO2/SiN passivation. A good correlation is found between pulsed and power measurements. Copyright © 2014 IFSA Publishing, S. L.