Characterization of ultra-thin SOI MOSFETs by coupling effect between front and back interfaces

Authors :: Ohata S. Cristoloveanu M. Casse A. Vandooren F. Dauge, A.
Domenget, Chahla
Institut de Microélectronique, Electromagnétisme et Photonique (IMEP)
Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique de Grenoble (INPG)-Université Joseph Fourier - Grenoble 1 (UJF)
Université Joseph Fourier - Grenoble 1 (UJF)-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS)
Source :: Com. a 2005 IEEE Int. SOI Conf, Com. a 2005 IEEE Int. SOI Conf, 2005, XX, pp.XX
Publication Year :: 2005
Publisher :: HAL CCSD, 2005.
Abstract: International audience

Subjects :: [SPI.ELEC]Engineering Sciences [physics]/Electromagnetism
[INFO.INFO-TS]Computer Science [cs]/Signal and Image Processing
[INFO.INFO-TS] Computer Science [cs]/Signal and Image Processing
[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
[SPI.ELEC] Engineering Sciences [physics]/Electromagnetism
[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
[SPI.SIGNAL]Engineering Sciences [physics]/Signal and Image processing
ComputingMilieux_MISCELLANEOUS
[SPI.SIGNAL] Engineering Sciences [physics]/Signal and Image processing

Language :: English
Database :: OpenAIRE
Journal :: Com. a 2005 IEEE Int. SOI Conf, Com. a 2005 IEEE Int. SOI Conf, 2005, XX, pp.XX
Accession number :: edsair.dedup.wf.001..8634d3eb35aef523e29bab5db864a9cc

Tools