Radiative Recombination Limited Lifetimes in a-plane (Al,Ga)N/GaN single quantum wells grown on GaN

Authors :: Corfdir, Pierre
Dussaigne, Amélie
Lefebvre, Pierre
Teisseyre, H.
Suski, Tadeusz
Grzegory, Izabella
Ganière, Jean-Daniel
Grandjean, N.
Deveaud-Plédran, Benoit
Institute of Condensed Matter Physics [Lausanne]
Ecole Polytechnique Fédérale de Lausanne (EPFL)
Departamento de Ingeniería Electrónica and ISOM (ETSI Telecomunicacion)
Universidad Politécnica de Madrid (UPM)-Ciudad Universitaria
Groupe d'étude des semiconducteurs (GES)
Université Montpellier 2 - Sciences et Techniques (UM2)-Centre National de la Recherche Scientifique (CNRS)
Institute of High Pressure Physics [Warsaw] (IHPP)
Polska Akademia Nauk = Polish Academy of Sciences (PAN)
Suite Mise à Disposition à l'EPF-Lausanne
Source :: International Workshop on Nitride Semiconductors-IWN 2010, International Workshop on Nitride Semiconductors-IWN 2010, Sep 2010, Tampa, Floride., United States
Publication Year :: 2010
Publisher :: HAL CCSD, 2010.
Abstract: International audience

Subjects :: [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]
ComputingMilieux_MISCELLANEOUS

Language :: English
Database :: OpenAIRE
Journal :: International Workshop on Nitride Semiconductors-IWN 2010, International Workshop on Nitride Semiconductors-IWN 2010, Sep 2010, Tampa, Floride., United States
Accession number :: edsair.dedup.wf.001..6ada2358b835d30e10405641472aedd1

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