Back to Search Start Over

Ultra-thin strained SOI substrate analysis by pseudo-MOS measurements

Details

Language :
English
ISSN :
01679317 and 18735568
Database :
OpenAIRE
Journal :
Microelectronic Engineering, Microelectronic Engineering, Elsevier, 2005, 80, pp.241-244, 14th Biennial Conf. on Insulating Films On Semiconductors (INFOS'05), 14th Biennial Conf. on Insulating Films On Semiconductors (INFOS'05), 2005, XX, pp.XX
Accession number :
edsair.dedup.wf.001..675436383200075c5699f7867b6b4c95