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Ultra-thin strained SOI substrate analysis by pseudo-MOS measurements
- Source :
- Microelectronic Engineering, Microelectronic Engineering, Elsevier, 2005, 80, pp.241-244, 14th Biennial Conf. on Insulating Films On Semiconductors (INFOS'05), 14th Biennial Conf. on Insulating Films On Semiconductors (INFOS'05), 2005, XX, pp.XX
- Publication Year :
- 2005
- Publisher :
- HAL CCSD, 2005.
-
Abstract
- International audience
- Subjects :
- [SPI.ELEC]Engineering Sciences [physics]/Electromagnetism
[INFO.INFO-TS]Computer Science [cs]/Signal and Image Processing
[INFO.INFO-TS] Computer Science [cs]/Signal and Image Processing
[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
[SPI.ELEC] Engineering Sciences [physics]/Electromagnetism
[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
[SPI.SIGNAL]Engineering Sciences [physics]/Signal and Image processing
ComputingMilieux_MISCELLANEOUS
[SPI.SIGNAL] Engineering Sciences [physics]/Signal and Image processing
Subjects
Details
- Language :
- English
- ISSN :
- 01679317 and 18735568
- Database :
- OpenAIRE
- Journal :
- Microelectronic Engineering, Microelectronic Engineering, Elsevier, 2005, 80, pp.241-244, 14th Biennial Conf. on Insulating Films On Semiconductors (INFOS'05), 14th Biennial Conf. on Insulating Films On Semiconductors (INFOS'05), 2005, XX, pp.XX
- Accession number :
- edsair.dedup.wf.001..675436383200075c5699f7867b6b4c95