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Photoluminescence and time-resolved photoluminescence studies of lateral carriers transfer among InAs/GaAs quantum dots
- Source :
- Optical and Quantum Electronics, Optical and Quantum Electronics, Springer Verlag, 2017, 49 (4), Optical and Quantum Electronics, 2017, 49 (4)
- Publication Year :
- 2017
- Publisher :
- HAL CCSD, 2017.
-
Abstract
- International audience; We report on the lateral transfer and thermal escape of carriers in InAs quantum dots (QDs) grown on a GaAs substrate by solid source molecular beam epitaxy by mean of photoluminescence (PL) and time-resolved PL measurements. The temperature-dependent PL spectra are discussed in terms of the inhomogeneous size distribution of the QDs and the carrier tunneling process from small to large QDs. The dependence of the photoluminescence decay time on the emission-wavelength is attributed to lateral carriers’ transfer within QDs with an interdot carrier tunneling time of 910 ps under low excitation conditions.
- Subjects :
- Condensed Matter::Materials Science
[PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics]
Time resolved photoluminescence
Condensed Matter::Other
Quantum dots
Tunneling
Physics::Optics
[CHIM]Chemical Sciences
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Photoluminescence
Subjects
Details
- Language :
- English
- ISSN :
- 03068919 and 1572817X
- Database :
- OpenAIRE
- Journal :
- Optical and Quantum Electronics, Optical and Quantum Electronics, Springer Verlag, 2017, 49 (4), Optical and Quantum Electronics, 2017, 49 (4)
- Accession number :
- edsair.dedup.wf.001..5fa7b99749ff2bd50c2fa1e0ea046b8b