THz emission enhancement in FET/HEMT due to excess electrons in channel-under-gate regions

Authors :: Gružinskis, V.
Shiktorov, P.
Starikov, E.
Penot, A.
Nouvel, P.
Torres, J.
Palermo, C.
Varani, L.
Semiconductor Physics Institute (Vilnius)
Semiconductor Physics Institute
Vilnius University [Vilnius]
Institut d’Electronique et des Systèmes (IES)
Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)
Térahertz, hyperfréquence et optique (TéHO)
Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)
Umesh Mishra and Stephen M. Goodnick
Source :: 17th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures, 17th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures, Umesh Mishra and Stephen M. Goodnick, 2011, Santa Barbara, United States
Publication Year :: 2011
Publisher :: HAL CCSD, 2011.
Abstract: International audience

Subjects :: ComputingMilieux_MISCELLANEOUS
[SPI.TRON]Engineering Sciences [physics]/Electronics

Language :: English
Database :: OpenAIRE
Journal :: 17th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures, 17th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures, Umesh Mishra and Stephen M. Goodnick, 2011, Santa Barbara, United States
Accession number :: edsair.dedup.wf.001..4e2b8eec039f4bbe2008c9622d492f60

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