Excitons in GaN/AlGaN homoepitaxial quantum wells grown along the nonpolar (02-11) direction on bulk GaN substrates

Authors :: Teisseyre, Henryk
Skierbiszewski, C.
Łucznik, Boleslaw
G., Kamler
A., Feduniewicz
Siekacz, M
Valvin, Pierre
Lefebvre, Pierre
Suski, Tadeusz
Perlin, Piotr
Grzegory, Izabella
Porowski, Sylvester
Institute of High Pressure Physics [Warsaw] (IHPP)
Polska Akademia Nauk = Polish Academy of Sciences (PAN)
Groupe d'étude des semiconducteurs (GES)
Université Montpellier 2 - Sciences et Techniques (UM2)-Centre National de la Recherche Scientifique (CNRS)
Source :: 6th International Conference on Nitride Semiconductors (ICNS6)., 6th International Conference on Nitride Semiconductors (ICNS6)., Aug 2006, Brème, Germany
Publication Year :: 2006
Publisher :: HAL CCSD, 2006.
Abstract: International audience

Subjects :: [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics]
[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]
[SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic
[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
ComputingMilieux_MISCELLANEOUS

Language :: English
Database :: OpenAIRE
Journal :: 6th International Conference on Nitride Semiconductors (ICNS6)., 6th International Conference on Nitride Semiconductors (ICNS6)., Aug 2006, Brème, Germany
Accession number :: edsair.dedup.wf.001..4c80affef9d1ed7aa855529496413858

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