1/fNoise Characteristics of AlGaN/GaN FinFETs with and without TMAHsurface treatment

Authors :: Vodapally, Sindhuri
Son, Dong-Hyeok
Lee, Dong-Gi
Sakong, SungHwan
Jeong, Yoon-Ha
Cho, In-Tak
Lee, Jong-Ho
Cristoloveanu, Sorin
Bae, Youngho
Im, Ki-Sik
Lee, Jung-Hee
Kyungpook National University [Daegu]
Pohang University of Science and Technology (POSTECH)
Seoul National University of Science and Technology, Seoul, Republic of Korea
Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC)
Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS)
Uiduk university, Gyeongju
Source :: Proceedings INFOS 2015, 19th Conference on Insulating Films on Semiconductors (INFOS), 19th Conference on Insulating Films on Semiconductors (INFOS), Jun 2015, Udine, Italy. pp.197-198
Publication Year :: 2015
Publisher :: HAL CCSD, 2015.
Abstract: International audience

Subjects :: [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
ComputingMilieux_MISCELLANEOUS
ISBN: 978-88-9030-695-2

Language :: English
Database :: OpenAIRE
Journal :: Proceedings INFOS 2015, 19th Conference on Insulating Films on Semiconductors (INFOS), 19th Conference on Insulating Films on Semiconductors (INFOS), Jun 2015, Udine, Italy. pp.197-198
Accession number :: edsair.dedup.wf.001..479d4c9cd8ce729764fb756fff57b36d

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