Compact modeling of gate tunneling leakage current in advanced nanoscale soi mosfets

MLA

Darbandy, Ghader. Compact Modeling of Gate Tunneling Leakage Current in Advanced Nanoscale Soi Mosfets. Dec. 2012. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.dedup.wf.001..45ad3e0de1e6c68bd12044c9aaa94d15&authtype=sso&custid=ns315887.

APA

Darbandy, G. (2012). Compact modeling of gate tunneling leakage current in advanced nanoscale soi mosfets.

Chicago

Darbandy, Ghader. 2012. “Compact Modeling of Gate Tunneling Leakage Current in Advanced Nanoscale Soi Mosfets,” December. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.dedup.wf.001..45ad3e0de1e6c68bd12044c9aaa94d15&authtype=sso&custid=ns315887.