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Theoretical investigation of van der Waals forces between solid surfaces at nanoscales
- Source :
- Surface Science, 16, 603, 2580-2587
- Publication Year :
- 2009
-
Abstract
- A theoretical investigation of van der Waals forces acting between two solid silicon surfaces at separations from zero to approximately 20 nm is presented. We focused our efforts on the analysis of different factors that can cause deviations from the classical pressure-distance dependence p ∼ 1/D3. It is demonstrated that a layer (oxide or water) at any of the surfaces influences the pressure up to distances, which are an order of magnitude larger than its own thickness. A jump on the p(D) curve is expected at contact of the adsorbed liquid layers. The retardation of van der Waals forces at 5 < D < 20 nm has the similar effect on the pressure as 1 nm oxide layers. At the far end of this range the pressure decreases by 30% due to the retardation. Nanoscale roughness plays a great role when the surfaces are close-to-contact, the crucial factor is the height distribution of asperities. However, their curvature and surface density are also important, as well as the amount of adsorbed water. © 2009 Elsevier B.V. All rights reserved.
- Subjects :
- Silicon
Topography
Liquid layer
Silicon oxides
Oxide layer
Nano-scale roughness
Pressure effects
Surface topography
Van der Waals forces
Height distribution
Theoretical investigations
Materials
Adsorbed water
Surface structure
Solid silicon
Solid surface
Liquids
Nanostructured materials
Surface structure, morphology, roughness, and topography
Order of magnitude
Dielectric properties
Semi-empirical models and model calculations
Nano scale
Surface morphology
Surface density
Subjects
Details
- Language :
- English
- Database :
- OpenAIRE
- Journal :
- Surface Science, 16, 603, 2580-2587
- Accession number :
- edsair.dedup.wf.001..43357a12be5cc29672a290e807209396