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Light-induced degradation in copper-contaminated gallium-doped silicon
- Source :
- physica status solidi (RRL)-Rapid Research Letters
- Publication Year :
- 2013
-
Abstract
- To date, gallium-doped Czochralski (Cz) silicon has constituted a solar cell bulk material free of light-induced degradation. However, we measure light-induced degradation in gallium-doped Cz silicon in the presence of copper impurities. The measured degradation depends on the copper concentration and the material resistivity. Gallium-doped Cz silicon is found to be less sensitive to copper impurities than borondoped Cz silicon, emphasizing the role of boron in the formation of copper-related light-induced degradation.
- Subjects :
- inorganic chemicals
lifetime
gallium
Silicon
Energy
Physics
technology, industry, and agriculture
silicon
Gallium
complex mixtures
Silicium-Photovoltaik
Degradation
copper
Charakterisierung
Zellen und Module
Charakterisierung von Prozess- und Silicium-Materialien
Copper
degradation
Solarzellen - Entwicklung und Charakterisierung
Subjects
Details
- Language :
- English
- Database :
- OpenAIRE
- Journal :
- physica status solidi (RRL)-Rapid Research Letters
- Accession number :
- edsair.dedup.wf.001..3f220ed2006d9ce3e32ca12ef061247b