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Electron cyclotron resonance-reactive ion etching of GaN by cyclic injection of CH 4/H 2/Ar and O 2 with constant Ar flow for high etch rate and improvement of etched surface morphology

Authors :
Awa, Y.
Ide, T.
Arakawa, T.
Nobuo Haneji
Tada, K.
Sugiyama, M.
Shimizu, H.
Shimogaki, Y.
Nakano, Y.
Source :
Scopus-Elsevier

Details

Database :
OpenAIRE
Journal :
Scopus-Elsevier
Accession number :
edsair.dedup.wf.001..3ea85a5f0c759422fbcc1353bf993fbe

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