Ferroelectric HfO2 based devices fabrication and remaining issues

International audience; New computer generations require micro-processors in close proximity to non-volatile memories (NVM), both working with low power consumption and high write speed. Since current FLASH technology cannot perform at these specifications, new memory solutions are necessary. Novel HfO2 based NVM cells could offer the required properties and have the advantage that HfO2 is already known for its compatibility with CMOS processing as shown in standard state-of-the-art logic nodes. In contrast, current FRAM products on the market are limited by the properties of the ferroelectric PbZrTiO3 material resulting in scaling limitations. With the discovery of ferroelectricity in doped HfO2 the introduction into scaled non-volatile memory devices based on a one-transistor one-capacitor (1T-1C FRAM) or a one-transistor (1T FeFET) cell became possible. HfO2 shows ferroelectric properties when doped with a variety of different dopants in ~5-20 nm thin thickness range which enables further scaling of current memory devices. This presentation presents the current status of hafnium oxide material and based memory devices and their remaining issues.