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Characterization of highly doped Ga0.86 In0.14As0.13Sb0.87 grown by liquid phase epitaxy

Authors :
Díaz-Reyes, J.
Galván-Arellano, M.
Julio G Mendoza-Alvarez
Arias-Cerón, J. S.
Herrera-Pérez, J. L.
López-Cruz, E.
Source :
Scopus-Elsevier

Details

Database :
OpenAIRE
Journal :
Scopus-Elsevier
Accession number :
edsair.dedup.wf.001..32f4126576806f0c94eee5833103df0c

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