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Comparison of Cu3Si and Cu5Si reactivities in direct synthesis of dimethyldichlorosilane

Authors :
Caillod, L.
Bergeret, G.
Bertolini, J.C.
Garcia-Escomel, C.
Colin, Pascale
Institut de recherches sur la catalyse (IRC)
Centre National de la Recherche Scientifique (CNRS)
Rhodia Centre de Recherche
RHODIA
Oye H.A.
Brekken H.
Foosnaes T.
Nygaard L.
IRCELYON, ProductionsScientifiques
Oye H.A., Brekken H., Foosnaes T., Nygaard L.
Source :
Silicon for the chemical industry VIII Conference, Silicon for the chemical industry VIII Conference, 2006, Trondheim, Norway. pp.12-15 juin, Proceedings of the Silicon for the chemical industry VIII conference, Trondheim 12-16 juin 2006.
Publication Year :
2006
Publisher :
HAL CCSD, 2006.

Abstract

The reactivity of Cu3Si and Cu5Si in the direct synthesis of dimethyldichlorosilane (Me2) was studied on a fixed bed under atmospheric conditions. The reactive mass was characterized after reaction by XRD and scanning electron microscopy. On Cu3Si at 315 °C, the transformation of silicon is high: it reaches 80% after 5 h reaction. But, because of the coking, the Me2 selectivity after 2 h reaction is negligible, the main product being the methyltrichlorosilane. At 200 °C, the Si transformation rate is lower, but the Me2 selectivity remains as high as 60% after 5 h and finally the Me2 yield is larger. On Cu5Si at 200 and 250 °C, the Me2 selectivity, and the yield as well, are higher than on Cu3Si, but the reaction stops after a half an hour. Clearly, the Si surface atoms in Cu5Si are initially more reactive than in Cu3Si to produce Me2. During the direct synthesis there is a progressive Cu enrichment and XRD patterns show the following succession of phases: Cu3Si → Cu15Si4→ Cu5Si → Cu0.

Details

Language :
English
Database :
OpenAIRE
Journal :
Silicon for the chemical industry VIII Conference, Silicon for the chemical industry VIII Conference, 2006, Trondheim, Norway. pp.12-15 juin, Proceedings of the Silicon for the chemical industry VIII conference, Trondheim 12-16 juin 2006.
Accession number :
edsair.dedup.wf.001..2f47fab1bbc3aee3e7422d496accc464