Electrical transport measurements and topography of III-V semiconductor nanowires by four probe and low temperature scanning tunneling microscopy

Authors :: DURAND, Corentin
Berthe, Maxime
MAKOUDI, Y.
Nguyen, T.H.
Caroff, P.
Nys, J.P.
Grandidier, B.
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN)
Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)
Source :: Materials Research Society Fall Meeting, MRS Fall 2011, Symposium BB : Semiconductor nanowires for photovoltaics, Materials Research Society Fall Meeting, MRS Fall 2011, Symposium BB : Semiconductor nanowires for photovoltaics, 2011, Boston, MA, United States, 4th Plenary Workshop of GdR Nanofils Semiconducteurs, 4th Plenary Workshop of GdR Nanofils Semiconducteurs, 2011, Porquerolles, France
Publication Year :: 2011
Publisher :: HAL CCSD, 2011.

Language :: English
Database :: OpenAIRE
Journal :: Materials Research Society Fall Meeting, MRS Fall 2011, Symposium BB : Semiconductor nanowires for photovoltaics, Materials Research Society Fall Meeting, MRS Fall 2011, Symposium BB : Semiconductor nanowires for photovoltaics, 2011, Boston, MA, United States, 4th Plenary Workshop of GdR Nanofils Semiconducteurs, 4th Plenary Workshop of GdR Nanofils Semiconducteurs, 2011, Porquerolles, France
Accession number :: edsair.dedup.wf.001..23f98e9ddf5e2cb7d42d5944b5727882

Tools