Memory Solutions for Flexible Thin-Film Logic: Up to 8kb, >105.9kb/s LPROM and SRAM with Integrated Timing Generation Meeting the ISO NFC Standard

© 2019 IEEE. Thin-film transistor (TFT) technologies have long been used predominantly for display fabrication and are attractive for large area, low cost and flexible circuit applications. Thanks to the improving performance of thin-film metal-oxide NFC tags and data processing chips on foil [1], [2], fabs are considering the large-scale production of flexible logic circuits. However, these systems require a memory, but metal-oxide technology lacks reliable, large memory arrays. Today, data storage is limited to ROMs, flipflops and SRAMs. No memory array has been demonstrated with sufficient storage capacity and speed within the typical power and area budget. This paper demonstrates the first large, fast and low-power memory array in flexible metal-oxide technology, comparable to the Si Intel 4000 series in the seventies [3]. ispartof: pages:206-+ ispartof: 2019 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE (ISSCC) vol:62 pages:206-+ ispartof: IEEE International Solid- State Circuits Conference (ISSCC) location:CA, San Francisco date:17 Feb - 21 Feb 2019 status: published