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Evidence for the formation of two phases during the growth of SrTiO3 on silicon

Authors :
Niu, G.
Penuelas, J.
Largeau, L.
Vilquin, B.
Maurice, J.-L.
Botella, C.
Hollinger, G.
Saint-Girons, G.
INL - Hétéroepitaxie et Nanostructures (INL - H&N)
Institut des Nanotechnologies de Lyon (INL)
École Centrale de Lyon (ECL)
Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL)
Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon)
Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL)
Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)
Laboratoire de photonique et de nanostructures (LPN)
Centre National de la Recherche Scientifique (CNRS)
Laboratoire de physique des interfaces et des couches minces [Palaiseau] (LPICM)
École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS)
École centrale de Lyon
Source :
Physical Review B: Condensed Matter and Materials Physics (1998-2015), Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2011, 83, pp.054105. ⟨10.1103/PhysRevB.83.054105⟩
Publication Year :
2011
Publisher :
HAL CCSD, 2011.

Abstract

International audience; Epitaxial SrTiO3 (STO)/Si templates open a unique opportunity for the integration of ferroelectric oxides, such as BaTiO3 on silicon and for the realization of new devices exploiting ferroelectricity. STO itself has been shown as ferroelectric at room temperature when deposited in thin layers on Si, while bulk STO is tetragonal and, thus, ferroelectric below 105 K. Here, we demonstrate the coexistence, at room temperature, of strained cubic and tetragonal phases in thin STO/Si layers. The tetragonal STO phase presents a pronounced tetragonality for thicknesses up to 24 ML. Above this thickness, the strained cubic STO phase starts relaxing while the tetragonal STO phase progressively transits to cubic STO. The origin of the simultaneous formation of these two phases is analyzed and is attributed to oxygen segregation at the early stages of the growth.

Details

Language :
English
ISSN :
10980121 and 1550235X
Database :
OpenAIRE
Journal :
Physical Review B: Condensed Matter and Materials Physics (1998-2015), Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2011, 83, pp.054105. ⟨10.1103/PhysRevB.83.054105⟩
Accession number :
edsair.dedup.wf.001..157d249cfb074572f9726ea934df52aa
Full Text :
https://doi.org/10.1103/PhysRevB.83.054105⟩