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Over 40W, X-Band GaN on SiC MMIC Amplifier
- Source :
- 15th European Microwave Integrated Circuits Conference, EuMIC 2020, 15th European Microwave Integrated Circuits Conference, EuMIC 2020, Jan 2021, Utrecht, Netherlands. pp.265-268
- Publication Year :
- 2021
- Publisher :
- HAL CCSD, 2021.
-
Abstract
- International audience; In this paper we present the study and obtained results of a MMIC High Power Amplifier operating in X-band. The device is designed using 250nm GaN HEMT on SiC process. The targeted specifications include pulsed operation from 8 to 10.5GHz. In pulsed mode and 28V of drain voltage, an output power more than 40W with (37-40)% PAE has been achieved throughout the bandwidth, while remarkable 52.4W output power with associated 37% PAE has been recorded at 8.75GHz for a 32V of drain voltage. The HPA stability has been studied by considering the influence of external decoupling components and dedicated testing environment. © 2021 EuMA.
Details
- Language :
- English
- Database :
- OpenAIRE
- Journal :
- 15th European Microwave Integrated Circuits Conference, EuMIC 2020, 15th European Microwave Integrated Circuits Conference, EuMIC 2020, Jan 2021, Utrecht, Netherlands. pp.265-268
- Accession number :
- edsair.dedup.wf.001..09d8eee296a89555806b832c104d349a