TCAD simulation of radiation-induced leakage current in SDRAM

Authors :: Nguyen, Hoang
Rodriguez, Axel
Wrobel, Frédéric
Michez, Alain
Bezerra, Francoise
Chatry, Nathalie
Institut d’Electronique et des Systèmes (IES)
Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)
Radiations et composants (RADIAC)
Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)
Syrlinks (FRANCE)
Centre National d’Études Spatiales [Paris] (CNES)
TRAD [Labège]
TRAD
Source :: 29th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2018), 29th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2018), Oct 2018, Aalborg, Denmark
Publication Year :: 2018
Publisher :: HAL CCSD, 2018.
Abstract: International audience

Subjects :: ComputingMilieux_MISCELLANEOUS
[SPI.TRON]Engineering Sciences [physics]/Electronics

Language :: English
Database :: OpenAIRE
Journal :: 29th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2018), 29th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2018), Oct 2018, Aalborg, Denmark
Accession number :: edsair.dedup.wf.001..069cdab6ca90a37a8cacd79db87a7a39

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