GaN-on-Si HEMTs above 10 W/mm at 2 GHz together with high thermal stability at 325°C

Authors :: Medjdoub, F.
Marcon, D.
Das, J.
Derluyn, J.
Cheng, K.
Degroote, S.
Vellas, N.
Gaquière, C.
Germain, M.
Decoutere, S.
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN)
Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)
Source :: Proceedings of the 5th European Microwave Integrated Circuits Conference, EuMIC 2010, 5th European Microwave Integrated Circuits Conference, EuMIC 2010, 5th European Microwave Integrated Circuits Conference, EuMIC 2010, 2010, France. pp.37-40, Scopus-Elsevier
Publication Year :: 2010
Publisher :: HAL CCSD, 2010.

Language :: English
Database :: OpenAIRE
Journal :: Proceedings of the 5th European Microwave Integrated Circuits Conference, EuMIC 2010, 5th European Microwave Integrated Circuits Conference, EuMIC 2010, 5th European Microwave Integrated Circuits Conference, EuMIC 2010, 2010, France. pp.37-40, Scopus-Elsevier
Accession number :: edsair.dedup.wf.001..0053b02e1228bc1df17717d72e3d6ddb

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