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Full-band quantum transport simulation in presence of hole-phonon interactions using a mode-space k·p approach
- Publication Year :
- 2020
- Publisher :
- IOP Publishing, 2020.
-
Abstract
- Fabrication techniques at the nanometer scale offer potential opportunities to access single dopant features in nanoscale transistors. Here we report full-band quantum transport simulations with hole-phonon interactions through a device consisting of two gates- all-around in series and a p-type Si nanowire channel with a single-dopant within each gated region. For this purpose, we have developed and implemented a mode-space based full-band quantum transport simulator with phonon scattering using the six-band k.p method. Based on the non-equilibrium Green's function formalism and the self-consistent Born's approximation, an expression for the hole-phonon interactions self-energy within the mode-space representation is introduced.
- Subjects :
- Condensed Matter::Materials Science
Subjects
Details
- Language :
- English
- ISSN :
- 09574484
- Database :
- OpenAIRE
- Accession number :
- edsair.core.ac.uk....d012bea8edcae44c93e33c43bf11fb9b