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Bi-induced band gap reduction in epitaxial InSbBi alloys

Authors :
Rajpalke, Mohana K.
Linhart, W. M.
Yu, K. M.
Birkett, Michael Alexander
Alaria, Jonathan
Bomphrey, John James
Sallis, S.
Piper, L. F. J.
Jones, T. S. (Tim S.)
Ashwin, M. J.
Veal, T. D. (Tim D.)
Publication Year :
2014
Publisher :
American Institute of Physics, 2014.

Abstract

The properties of molecular beam epitaxy-grown InSb 1− x Bi x alloys are investigated. Rutherford backscattering spectrometry shows that the Bi content increases from 0.6% for growth at 350 °C to 2.4% at 200 °C. X-ray diffraction indicates Bi-induced lattice dilation and suggests a zinc-blende InBi lattice parameter of 6.626 Å. Scanning electron microscopy reveals surface InSbBi nanostructures on the InSbBi films for the lowest growth temperatures, Bi droplets at intermediate temperatures, and smooth surfaces for the highest temperature. The room temperature optical absorption edge was found to change from 172 meV (7.2 μm) for InSb to ∼88 meV (14.1 μm) for InSb 0.976Bi0.024, a reduction of ∼35 meV/%Bi.

Subjects

Subjects :
QC

Details

Language :
English
ISSN :
00036951
Database :
OpenAIRE
Accession number :
edsair.core.ac.uk....872367b7c51ee1c8aa8f2c3d2bf14248