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Bistable hybrids in sol-gel technology for switching devices
- Source :
- Microelectronics 38 (2007): 1169–1174., info:cnr-pdr/source/autori:Dima, A; Della Corte, F; Rendina, I; Dima, MO/titolo:Bistable hybrids in sol-gel technology for switching devices/doi:/rivista:Microelectronics/anno:2007/pagina_da:1169/pagina_a:1174/intervallo_pagine:1169–1174/volume:38
- Publication Year :
- 2007
- Publisher :
- Mackintosh Publications, Luton , Regno Unito, 2007.
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Abstract
- Development of memories based on organic soft materials is a current industrial niche aimed at the upper contacts flash memories. The electrical bistability of such materials makes them ideal candidates for cost-effective, fast-programming switching devices. Hybrid thin films Of SiO2 with Rose Bengal (bis-triethylammonium) dopant are here reported for the first time, together with their characterisations. Technology-wise the main advantage of the films is the possibility to cast photolithographically, which is also cost-effective. The physical and chemical stability of the films yields reproducible devices, from both the micro technological and electrical point of view.
Details
- Database :
- OpenAIRE
- Journal :
- Microelectronics 38 (2007): 1169–1174., info:cnr-pdr/source/autori:Dima, A; Della Corte, F; Rendina, I; Dima, MO/titolo:Bistable hybrids in sol-gel technology for switching devices/doi:/rivista:Microelectronics/anno:2007/pagina_da:1169/pagina_a:1174/intervallo_pagine:1169–1174/volume:38
- Accession number :
- edsair.cnr...........ffc4a1d096829803fc3b78928233e5ee