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Atomistic and Continuum Simulations of the Homo-epitaxial Growth of SiC
- Source :
- Materials science forum 615-617 (2008): 73–76., info:cnr-pdr/source/autori:Camarda M, La Magna A, La Via F/titolo:Atomistic and Continuum Simulations of the Homo-epitaxial Growth of SiC/doi:/rivista:Materials science forum/anno:2008/pagina_da:73/pagina_a:76/intervallo_pagine:73–76/volume:615-617
- Publication Year :
- 2008
- Publisher :
- Trans Tech Publications, Uetikon-Zürich , Svizzera, 2008.
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Abstract
- Using joined super-lattice Kinetic Monte Carlo simulations, continuous modelling and recent experimental data on the homoepitaxial growth of 4H Silicon Carbide we study the transition between monocrystalline and polycrystalline growth in terms of misorientation cut, growth rate and temperature. We compare these optimally calibrated results both with previous continuous models and literature data. We demonstrate that this study was, indeed, necessary to correctly reformulate the phase diagram of the transition. © (2009) Trans Tech Publications, Switzerland.
- Subjects :
- Condensed Matter::Materials Science
Subjects
Details
- Database :
- OpenAIRE
- Journal :
- Materials science forum 615-617 (2008): 73–76., info:cnr-pdr/source/autori:Camarda M, La Magna A, La Via F/titolo:Atomistic and Continuum Simulations of the Homo-epitaxial Growth of SiC/doi:/rivista:Materials science forum/anno:2008/pagina_da:73/pagina_a:76/intervallo_pagine:73–76/volume:615-617
- Accession number :
- edsair.cnr...........f44362654019fc83035ea8e40cc3c1f3