Fabrication and characterization of Mn-catalyzed GaAs nanowires

Authors :: F. Martelli
S. Rubini
M. Piccin
G. Bais
F. Jabeen
S. De Franceschi
V. Grillo
E. Carlino
N. Mahne
S. Nannarone
M. Lazzarino
L. Businaro
F. Romanato
A. Franciosi.
Source :: Physics of Semiconductors 28th int. Conf, Vienna, AUSTRIA, JULY 24-28, info:cnr-pdr/source/autori:F. Martelli, S. Rubini, M. Piccin, G. Bais, F. Jabeen, S. De Franceschi, V. Grillo, E. Carlino, N. Mahne, S. Nannarone, M. Lazzarino, L. Businaro, F. Romanato, A. Franciosi./congresso_nome:Physics of Semiconductors 28th int. Conf/congresso_luogo:Vienna, AUSTRIA/congresso_data:JULY 24-28/anno:2007/pagina_da:/pagina_a:/intervallo_pagine
Publication Year :: 2007
Abstract: We report on the growth of microns long Mn-catalyzed GaAs nanowires. alpha-Mn is found on top of the wires, demonstrating that Mn acts as the growth catalyst. Transport measurements show that the wires have a p-behavior. Luminescence shows a peak at 1.522 eV. The blue shift with respect to bulk GaAs is not due to quantum effects.

Language :: English
Database :: OpenAIRE
Journal :: Physics of Semiconductors 28th int. Conf, Vienna, AUSTRIA, JULY 24-28, info:cnr-pdr/source/autori:F. Martelli, S. Rubini, M. Piccin, G. Bais, F. Jabeen, S. De Franceschi, V. Grillo, E. Carlino, N. Mahne, S. Nannarone, M. Lazzarino, L. Businaro, F. Romanato, A. Franciosi./congresso_nome:Physics of Semiconductors 28th int. Conf/congresso_luogo:Vienna, AUSTRIA/congresso_data:JULY 24-28/anno:2007/pagina_da:/pagina_a:/intervallo_pagine
Accession number :: edsair.cnr...........d7aaad9df53ce49fa7975e89ea71a24c