Evolution of Interface Properties During Atomic Layer Deposition of Rare Earth-based High-k Dielectrics on Si, Ge and III-V Substrates

Authors :: Lamagna L
Wiemer C
Baldovino S
Molle A
Perego M
Schamm-Chardon S
Coulon PE
Fanciulli M
Source :: MRS Spring Meeting: Symposium I: Materials for End-of-Roadmap Scaling of CMOS Devices, San Francisco, California, USA, 2010, info:cnr-pdr/source/autori:Lamagna L, Wiemer C, Baldovino S, Molle A, Perego M, Schamm-Chardon S, Coulon PE, Fanciulli M/congresso_nome:MRS Spring Meeting: Symposium I: Materials for End-of-Roadmap Scaling of CMOS Devices/congresso_luogo:San Francisco, California, USA/congresso_data:2010/anno:2010/pagina_da:/pagina_a:/intervallo_pagine
Publication Year :: 2010

Database :: OpenAIRE
Journal :: MRS Spring Meeting: Symposium I: Materials for End-of-Roadmap Scaling of CMOS Devices, San Francisco, California, USA, 2010, info:cnr-pdr/source/autori:Lamagna L, Wiemer C, Baldovino S, Molle A, Perego M, Schamm-Chardon S, Coulon PE, Fanciulli M/congresso_nome:MRS Spring Meeting: Symposium I: Materials for End-of-Roadmap Scaling of CMOS Devices/congresso_luogo:San Francisco, California, USA/congresso_data:2010/anno:2010/pagina_da:/pagina_a:/intervallo_pagine
Accession number :: edsair.cnr...........9a3f8bf649ee2bea9449fbb80c15d8f0

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