Study of defects in materials of interest for solar cell energy conversion - Biennial progress report (82 - 84) prepared on the project approved by U.S. - Yugoslav Joint Board on Scientific and Technological Co-operation in collaboration with U.S. Department of Energy, Washington, D.C. U.S.A. (84 pages)

This biennial progress report presents the reults of the studies in the framework of the research programs for the 2nd and 3rd year of the project. It deals with: - further results on BF(+)2 implanted n-type silicon, - the beginning of research on defects in solar-grade polycrysalline silicon, - studies of properties of heterojunctions in INSe, - synthesis methods of Zn3P2, thin film formation and characterization of their properties, - characterization of defects in varius as grown polycristalline silicon materials and after thermal treatment at high temperature, and - synthesis of the Zn3P2 compound by a new method with the constant phosphorus pressure and determination of structural, electrical and optical properties of Zn3P2 thin films.