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Direct wafer bonding of atomic layer deposited TiO2 and Al 2O3 thin films
- Source :
- Puurunen, R L, Suni, T, Ylivaara, O, Kondo, H, Ammar, M, Ishida, T, Fujita, H, Bosseboeuf, A, Zaima, S & Kattelus, H 2011, Direct wafer bonding of atomic layer deposited TiO 2 and Al 2 O 3 thin films . in 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11 ., 5969474, pp. 978-981, 16th International Conference on Solid-State Sensors, Actuators and Microsystems, Transducers’11, Beijing, China, 5/06/11 . https://doi.org/10.1109/TRANSDUCERS.2011.5969474
- Publication Year :
- 2011
-
Abstract
- In MEMS industry, silicon-on-insulator (SOI) wafers are gaining ground from blank silicon wafers as the main starting substrate. Tailored SOI wafers available in the market contain for example buried cavities or a buried gettering layer. Adding another layer in addition to the thermal SiO2 insulator, or replacing it with another material altogether, could be a way to tailor the properties of SOI wafers further. In this work, the direct wafer bonding of ALD TiO2, and Al2O3 for reference, is investigated, eventually in order to fabricate SOI wafers with other buried ALD oxides.
- Subjects :
- silicon-on-insulator
ALD
Atomic layer deposition
TiO
wafer bonding
AlO
Subjects
Details
- Language :
- English
- Database :
- OpenAIRE
- Journal :
- Puurunen, R L, Suni, T, Ylivaara, O, Kondo, H, Ammar, M, Ishida, T, Fujita, H, Bosseboeuf, A, Zaima, S & Kattelus, H 2011, Direct wafer bonding of atomic layer deposited TiO 2 and Al 2 O 3 thin films . in 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11 ., 5969474, pp. 978-981, 16th International Conference on Solid-State Sensors, Actuators and Microsystems, Transducers’11, Beijing, China, 5/06/11 . https://doi.org/10.1109/TRANSDUCERS.2011.5969474
- Accession number :
- edsair.355e65625b88..2c67a88df823e3b696ed8ebf9bbf11b5