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Design of capacitive RF mems power sensor
- Source :
- Vähä-Heikkilä, T, Kyynäräinen, J, Oja, A, Varis, J & Seppä, H 2002, Design of capacitive RF mems power sensor . in J Säily & S A Tretyakov (eds), Digest of technical papers : URSI/IEEE XXVII Convention on Radio Science. Espoo, Finland, 17-18 October 2002 . Helsinki University of Technology, Helsinki University of Technology: Radio Laboratory publications. Report S, no. 257, pp. 201-203 .
- Publication Year :
- 2002
- Publisher :
- Helsinki University of Technology, 2002.
-
Abstract
- A novel inline type millimeter wave MEMS power sensor is presented. The electrostatic force due to the ms voltage across the transmission line conductors displaces the sensor electrode, and the movement can be detected capacitively. RF properties of the sensor can be optimized so that S11 is better than -30 dB and S21 less than 0.1 dB up to 45 GHz with a power resolution of -37 dBm.
Details
- Language :
- English
- Database :
- OpenAIRE
- Journal :
- Vähä-Heikkilä, T, Kyynäräinen, J, Oja, A, Varis, J & Seppä, H 2002, Design of capacitive RF mems power sensor . in J Säily & S A Tretyakov (eds), Digest of technical papers : URSI/IEEE XXVII Convention on Radio Science. Espoo, Finland, 17-18 October 2002 . Helsinki University of Technology, Helsinki University of Technology: Radio Laboratory publications. Report S, no. 257, pp. 201-203 .
- Accession number :
- edsair.355e65625b88..2746280e016f031c029ff5b37bfde38b