Transmission electron microscopy of NdNiO<formula notation="TeX">$\mathsf{_3}$</formula> thin films on silicon substrates

The microstructure of NdNiO<formula notation="TeX">$_3$</formula> thin films deposited on Si (100) has been investigated by high resolution electron microscopy. Deposition at 250 <formula notation="TeX">$^{\circ}$</formula>C and 600 <formula notation="TeX">$^{\circ}$</formula>C and several annealing at high temperature under oxygen pressure were performed. Depending on the deposition temperature and annealing conditions, different texture and microstructure were observed. Relationships between microstructure and transport properties are discussed. The differences of grain boundaries are suggested to be responsible for the difference in transport properties of the films.