High-aspect-ratio silicon dioxide pillars

Authors :: Trifonov, T.
Rodríguez, A.
Servera, F.
Marsal, L. F.
Pallarès, J.
Alcubilla, R.
Source :: Physica Status Solidi (A) - Applications and Materials Science; June 2005, Vol. 202 Issue: 8 p1634-1638, 5p
Publication Year :: 2005
Abstract: This paper presents a technique for fabricating high-aspect-ratio silicon dioxide pillars by electrochemical etching of n-type silicon in hydrofluoric acid (HF) solutions. Basic process flow and etching conditions are described, which make it possible to obtain high-aspect-ratio pillar arrays with good uniformity. Pillar arrays of different dimensions (i.e. diameter and separation) and of different arrangements can be produced in a single etch step on the same wafer. The large surface area makes these pillar arrays possible candidates for applications in biological sensing. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)