Gain Characteristics of Self-Assembled InAs/GaAs Quantum Dots

Authors :: Arzberger, M.
Böhm, G.
Amann, M.C.
Abstreiter, G.
Source :: Physica Status Solidi (B) - Basic Solid State Physics; April 2001, Vol. 224 Issue: 3 p827-831, 5p
Publication Year :: 2001
Abstract: The gain characteristics of stacked self-assembled InAs/GaAs quantum dots (QDs) with an inhomogeneous broadening of the order of 100 meV are studied in comparison to an InGaAs quantum well. The QDs exhibit gain already at low current densities of ∼25 Acm—2 per QD layer, but the peak gain rises slowly with increasing current density. The energy of the peak gain is shifted from the low energy tail of the QD emission at low injection towards the wetting-layer at high injection.

Language :: English
ISSN :: 03701972 and 15213951
Volume :: 224
Issue :: 3
Database :: Supplemental Index
Journal :: Physica Status Solidi (B) - Basic Solid State Physics
Publication Type :: Periodical
Accession number :: ejs7160173
Full Text :: https://doi.org/10.1002/1521-3951(200104)224:3<827::AID-PSSB827>3.0.CO;2-5