Angular dispersion of photons and phonons in a photonic crystal of selectively grown GaN pyramids containing an InxGa1–xN quantum well structure

Angular-dependent reflection measurements were used to map out the dispersion relations of the resonant Bloch modes, and the angular dispersion of the phonon modes, in a photonic crystal consisting of selectively grown GaN pyramids containing a single InxGa1–xN/GaN quantum well. The dispersion of the photons exhibits strong photonic crystal characteristics, while the mean indium content of the ∼2 nm thickness InxGa1–xN layer was extracted from the angular dispersion of the phonon modes. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)