A nMOS-R Cross-Coupled Level Shifter With High dV/dt Noise Immunity for 600-V High-Voltage Gate Driver IC

MLA

Lu, Yu, et al. “A NMOS-R Cross-Coupled Level Shifter With High DV/Dt Noise Immunity for 600-V High-Voltage Gate Driver IC.” IEEE Transactions on Very Large Scale Integration Systems, vol. 32, no. 11, Nov. 2024, pp. 1993–2000. EBSCOhost, https://doi.org/10.1109/TVLSI.2024.3417385.

APA

Lu, Y., Cai, X., Lu, J., Pan, L., Dang, J., Xie, Y., Wang, X., & Li, B. (2024). A nMOS-R Cross-Coupled Level Shifter With High dV/dt Noise Immunity for 600-V High-Voltage Gate Driver IC. IEEE Transactions on Very Large Scale Integration Systems, 32(11), 1993–2000. https://doi.org/10.1109/TVLSI.2024.3417385

Chicago

Lu, Yu, Xiaowu Cai, Jian Lu, Longli Pan, Jianying Dang, Yafei Xie, Xupeng Wang, and Bo Li. 2024. “A NMOS-R Cross-Coupled Level Shifter With High DV/Dt Noise Immunity for 600-V High-Voltage Gate Driver IC.” IEEE Transactions on Very Large Scale Integration Systems 32 (11): 1993–2000. doi:10.1109/TVLSI.2024.3417385.