Method to determine the maximum current density of p-MoS2/p-CdSe/n-WS2/n-ITO solar cell

Cadmium Selenide (CdSe) made solar cells are considered an auspicious technology in the arena of thin-film photovoltaics cell due to their favourable properties of optoelectronic. The performance of CdSe solar cells is estimated in this work based on various key parameters: fill factor (FF), open circuit voltage (Voc), operating temperature (Temp), short circuit current density (Jsc), and collection-efficiency. The act of the solar cell is meaningfully affected by its temperature, with certain value of efficiency losses subsequently from higher temperatures due to their increased value of carrier-recombination rates. The optimal performance is preserved with the help of proper thermal-management. The distinctive range for the open circuit voltage (Voc) of CdSe solar-cells is from 0.5 to 1.0 V. For better material quality and effective junction properties, which are play a crucial role for attaining the high efficiency, that are also indicated by higher Voc values. The short circuit current density (Jsc) varies at 775 mA/cm2, which contingent on the light-absorption criteria as well as carrier-generation competences of the cell. More efficient value of photon-absorption and carrier-generation are replicated by the higher Jsc values. The fill-factor (FF) of the CdSe solar cells generally falls between 50 and 80%. For better performance of solar cell, specified by a higher fill-factor, that reflects their higher parallel resistance as well as lower series resistance, that are also vital for attaining their overall efficiency is too much high. The efficiency of carrier-collection and their utilization inside the solar cell is restrained by their collection-efficiency. Minimal value of recombination-losses and efficient carrier-transport quality are indicated by their high collection-efficiency.