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Modeling and testing of high-temperature 4H-SiC Schottky diode radiation detectors using thermionic and field emission models
- Source :
- Proceedings of SPIE; October 2024, Vol. 13151 Issue: 1 p131510F-131510F-12, 13019503p
- Publication Year :
- 2024
Details
- Language :
- English
- ISSN :
- 0277786X
- Volume :
- 13151
- Issue :
- 1
- Database :
- Supplemental Index
- Journal :
- Proceedings of SPIE
- Publication Type :
- Periodical
- Accession number :
- ejs67797000
- Full Text :
- https://doi.org/10.1117/12.3028507