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Ultrathin Self-Assembled Monolayer for Effective Silicon Solar Cell Passivation

Authors :
Li, Wenheng
Zhao, Ziqi
Guo, Jianxin
Chen, Bingbing
Wang, Xiao
Bai, Yuhua
Chen, Jingwei
Yang, Dehua
Gao, Qing
Yang, Xueliang
Wang, Jianming
Song, Dengyuan
Wang, Shufang
Zhang, Xuning
Chen, Jianhui
Source :
ACS Applied Materials & Interfaces; November 2024, Vol. 16 Issue: 44 p60912-60919, 8p
Publication Year :
2024

Abstract

Passivation technology is crucial for reducing interface defects and impacting the performance of crystalline silicon (c-Si) solar cells. Concurrently, maintaining a thin passivation layer is essential for ensuring efficient carrier transport. With an ultrathin passivated contact structure, both Silicon Heterojunction (SHJ) cells and Tunnel Oxide Passivated Contact (TOPCon) solar cells achieve an efficiency surpassing 26%. To reduce production costs and simplify solar cell manufacturing processes, the rapid development of organic material passivation technology has emerged. However, its widespread industrial production is hindered by environmental safety concerns, such as strong acid corrosion and biological and ecological safety issues. Here, we discovered a low-cost self-assembled monolayer (SAM) hole-selective transport material known as 2PACz ([2-(9H-carbazol-9-yl) ethyl] phosphonic acid) with phosphate groups to form c-Si solar cells for the first time. The ultrathin film of 2PACz with phosphate groups can establish strong and stable P–O–Si bonds on the silicon surface. Meanwhile, like 2PACz, a uniform ultrathin film with a carbazole function group can offer electron-localizing and thus hole-selective properties, which provides ideas for studying dopant-free silicon solar cells. As a result of such interfacial passivation engineering, it plays an important role in repairing porous structures, such as pyramid-textured silicon surfaces, and cutting losses during the commercialization of c-Si solar cells. Crucially, this advancement offers insights for the development of new high-efficiency ultrathin film passivation methods in the postsilicon era.

Details

Language :
English
ISSN :
19448244
Volume :
16
Issue :
44
Database :
Supplemental Index
Journal :
ACS Applied Materials & Interfaces
Publication Type :
Periodical
Accession number :
ejs67771863
Full Text :
https://doi.org/10.1021/acsami.4c10257