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Modelling-Augmented Failure Diagnostics in Planar SiC MOS Devices Using TDDB Measurements
Modelling-Augmented Failure Diagnostics in Planar SiC MOS Devices Using TDDB Measurements
- Source :
- Diffusion and Defect Data Part B: Solid State Phenomena; August 2024, Vol. 361 Issue: 1 p93-98, 6p
- Publication Year :
- 2024
-
Abstract
- In this study we analyzed the physical mechanisms governing time-dependent dielectric breakdown (TDDB) and we used TDDB physical model of dielectric breakdown, implemented in the defect-centric Ginestra® modeling platform, to deconvolute the intrinsic material properties effects and geometry feature impact on the gate oxide (GOx) and SiC-device breakdown.
Details
- Language :
- English
- ISSN :
- 10120394
- Volume :
- 361
- Issue :
- 1
- Database :
- Supplemental Index
- Journal :
- Diffusion and Defect Data Part B: Solid State Phenomena
- Publication Type :
- Periodical
- Accession number :
- ejs67566108
- Full Text :
- https://doi.org/10.4028/p-jbV5Vq