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Modelling-Augmented Failure Diagnostics in Planar SiC MOS Devices Using TDDB Measurements

Modelling-Augmented Failure Diagnostics in Planar SiC MOS Devices Using TDDB Measurements

Authors :
Cornigli, Davide
Schlichting, Holger
Becker, Tom
Larcher, Luca
Erlbacher, Johann Tobias
Pesic, Milan
Source :
Diffusion and Defect Data Part B: Solid State Phenomena; August 2024, Vol. 361 Issue: 1 p93-98, 6p
Publication Year :
2024

Abstract

In this study we analyzed the physical mechanisms governing time-dependent dielectric breakdown (TDDB) and we used TDDB physical model of dielectric breakdown, implemented in the defect-centric Ginestra® modeling platform, to deconvolute the intrinsic material properties effects and geometry feature impact on the gate oxide (GOx) and SiC-device breakdown.

Details

Language :
English
ISSN :
10120394
Volume :
361
Issue :
1
Database :
Supplemental Index
Journal :
Diffusion and Defect Data Part B: Solid State Phenomena
Publication Type :
Periodical
Accession number :
ejs67566108
Full Text :
https://doi.org/10.4028/p-jbV5Vq