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SiC GAA MOSFET Concept for High Power Electronics Performance Evaluation through Advanced TCAD Simulations
- Source :
- Diffusion and Defect Data Part B: Solid State Phenomena; August 2024, Vol. 360 Issue: 1 p75-80, 6p
- Publication Year :
- 2024
-
Abstract
- In this work a groundbreaking SiC power MOSFET based on innovative vertical Gate All Around (GAA) concept is presented. Extensive TCAD simulations are performed to analyze the performance in forward as well as in reverse conditions for this new device concept. The proposed design has a target rating voltage of 1200V, suitable for e-mobility applications.
Details
- Language :
- English
- ISSN :
- 10120394
- Volume :
- 360
- Issue :
- 1
- Database :
- Supplemental Index
- Journal :
- Diffusion and Defect Data Part B: Solid State Phenomena
- Publication Type :
- Periodical
- Accession number :
- ejs67566075
- Full Text :
- https://doi.org/10.4028/p-lhRi4M